物理
事件(粒子物理)
单事件翻转
计算机科学
瞬态(计算机编程)
心烦意乱
作者
G.B. Abadir,W. Fikry,Hani Ragai,O.A. Omar
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2005-12-05
卷期号:52 (5): 1518-1523
被引量:8
标识
DOI:10.1109/tns.2005.856718
摘要
In this work we present a simulation study for single events in n/sup +/-p junctions. The study investigates the variation of both the single-event induced current and the consequent collected charge with bias, substrate doping and minority carrier lifetime. We show that the minority carrier lifetime is the key factor in determining the amount of the total collected charge which is a new finding as per the authors' knowledge. We also present a brief study of the collection mechanisms and their dependence on the doping and bias. We finally conclude by the verification of a model that we had previously presented for the funneling-assisted collection current.
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