OPTOSTRUCTURAL AND ELECTRICAL STUDIES ON ELECTRODEPOSITED ZIRCONIUM SULPHOSELENIDE (ZrS 0.5 Se 0.5 ) 2 THIN FILMS

Zirconium sulphoselenide thin films were obtained onto the thoroughly cleaned conducting glass substrate (stainless steel and FTO) using electrodeposition technique at room temperature. The deposition mechanism and growth of the films were studied by cyclic voltammetry. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM study shows that the total substrate surface is well covered by densely packed spherical shaped grains. Stiochiometry of the film was studied by EDS technique. Optical absorption study shows the presence of direct transition having band gap energy 1.63 eV. Zirconium sulphoselenide is n-type semiconductor having activation energy, 0.058 eV in low temperature region and 0.168 eV in high temperature region.