GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 [micro sign]m

A resonant-cavity enhanced, separate absorption, charge, and multiplication avalanche photodiode using GaAs0.8Sb0.2 quantum wells on GaAs has been demonstrated. The device exhibited high gain and <1 nA dark current at 90% of breakdown. Peak quantum efficiency of 93% and full-width at half-maximum of 7 nm were observed at 1.064 µm.