钝化
材料科学
钙钛矿(结构)
硅
快速热处理
氧化物
纳米技术
分析化学(期刊)
化学工程
光电子学
串联
化学
图层(电子)
冶金
复合材料
有机化学
工程类
作者
Christoph Luderer,Michaela Penn,Christian Reichel,Frank Feldmann,Jan Christoph Goldschmidt,Susanne Richter,Angelika Hähnel,Volker Naumann,Martin Bivour,Martin Hermle
出处
期刊:IEEE Journal of Photovoltaics
日期:2021-11-01
卷期号:11 (6): 1395-1402
被引量:8
标识
DOI:10.1109/jphotov.2021.3101177
摘要
The performance of a low-resistive p + /n + poly-Si tunneling junction (SiTJ) based on a tunnel oxide passivating contact in dependence on the thermal budget of the applied post-deposition treatment is studied. We present two approaches to reduce the performance limiting parasitic dopant interdiffusion and, thus, the contact resistivity, without impairing the passivation quality. Both, carbon-alloying of poly-Si layers and the application of diffusion blocking interlayers are effective means to maintain a low contact resistivity of ∼24 mΩcm 2 at high thermal process temperatures of up to 950 °C. Those low values are obtained using either a standard furnace anneal or a rapid thermal process (RTP). We report on promising results toward a lean process sequence using only one single fast thermal treatment (RTP-only). As a main result, the flexibility for engineering and fabrication of our SiTJ was markedly improved, eventually facilitating industrially feasible perovskite/silicon tandem solar cells. One aspect being higher post-deposition temperatures needed for, e.g., bottom cell rear side contact formation and the first layers of the perovskite to cell.
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