氧化钇稳定氧化锆
残余应力
材料科学
立方氧化锆
电子束物理气相沉积
复合材料
压力(语言学)
兴奋剂
薄膜
化学气相沉积
纳米技术
光电子学
陶瓷
语言学
哲学
作者
A.M. Kamalan Kirubaharan,P. Kuppusami,Sujay Chakravarty,Arul Maximus Rabel,Anandh Jesuraj Selvaraj,Akash Singh
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2017-12-04
卷期号:36 (2)
被引量:8
摘要
Zirconia thin films with varying yttria concentrations (0, 4, and 10 mol. %) were grown on Si (111) substrates using electron beam physical vapor deposition technique. The residual stress as a function of depth on undoped and yttria doped zirconia films with different phases was determined using the modified sin2ψ technique by varying the x-ray angle of incidence. Surface profilometry was also used as a complementary technique for qualitative measurement of stress in these films. The residual stress profile revealed that tensile residual stress was present in the near-surface region and it decreased rapidly as a function of depth in all three films with different yttria concentration. The possible reasons for the film growth stress and stress gradient in the yttria doped zirconia films with different concentration of yttria are discussed.
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