记忆电阻器
计算机数据存储
非易失性存储器
计算机科学
半导体存储器
计算机存储器
记忆晶体管
计算机硬件
非易失性随机存取存储器
电阻随机存取存储器
像素
星团(航天器)
内存刷新
电子工程
电气工程
人工智能
工程类
电压
程序设计语言
作者
Jingru Sun,Meiqi Jiang,Qi Zhou,Chunhua Wang,Yichuang Sun
出处
期刊:Micromachines
[Multidisciplinary Digital Publishing Institute]
日期:2022-05-28
卷期号:13 (6): 844-844
被引量:8
摘要
As a new type of nonvolatile device, the memristor has become one of the most promising technologies for designing a new generation of high-density memory. In this paper, a 4-bit high-density nonvolatile memory based on a memristor is designed and applied to image storage. Firstly, a memristor cluster structure consisting of a transistor and four memristors is designed. Furthermore, the memristor cluster is used as a memory cell in the crossbar array structure to realize the memory design. In addition, when the designed non-volatile memory is applied to gray scale image storage, only two memory cells are needed for the storage of one pixel. Through the Pspice circuit simulation, the results show that compared with the state-of-the-art technology, the memory designed in this paper has better storage density and read–write speed. When it is applied to image storage, it achieves the effect of no distortion and fast storage.
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