抵抗
光刻胶
电子束光刻
极紫外光刻
材料科学
平版印刷术
极端紫外线
紫外线
光电子学
阴极射线
光学
下一代光刻
X射线光刻
纳米技术
电子
物理
激光器
图层(电子)
量子力学
作者
Scott M. Lewis,Hayden R. Alty,Michaela Vockenhuber,Guy A. DeRose,Antonio Fernandez-Mato,Dimitrios Kazazis,Paul L. Winpenny,Richard Grindell,Grigore A. Timco,Axel Scherer,Yasin Ekinci,Richard E. P. Winpenny
出处
期刊:Journal of micro/nanopatterning, materials, and metrology
[SPIE - International Society for Optical Engineering]
日期:2022-06-02
卷期号:21 (04)
标识
DOI:10.1117/1.jmm.21.4.041404
摘要
A new class of negative-tone resist materials has been developed for electron beam and extreme ultraviolet lithography. The resist is based on heterometallic rings. From initial electron beam lithography studies, the resist performance demonstrated a resolution of 40-nm pitch but at the expense of a low sensitivity. To improve the sensitivity, we incorporated HgCl2 and HgI2 into the resist molecular design. This dramatically improved the resist sensitivity while maintaining high resolution. This improvement was demonstrated using electron beam and extreme ultraviolet lithography.
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