Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED

Broadband Near-infrared phosphors have attracted great attention for its potential applications in pc-LED as a novel light source for substance measurements based on NIR spectroscopy. Here, CaMgSi2O6:xCr3+ diopside phosphor were prepared by high temperature solid-state reaction. The Cr3+emission band undergoes a red-shift from 772 nm to 822 nm followed with band broadening from 132 nm to 197 nm with the increase of x from 0.25% to 6%. Highly thermal stability with the quenching temperature as high as 355 °C for 1% and 236 °C for 4% Cr3+ concentrations are observed. NIR pc-LEDs were fabricated and high NIR output power of 42.04 mW for the bandwidth of 150 nm and 23.73 mW for a more broaden bandwidth of 187 nm are achieved at 100 mA drive current, respectively. Our results suggest that CaMgSi2O6:Cr3+phosphors have great potential for applications in broadband NIR pc-LED applications.