收发机
CMOS芯片
放大器
电子工程
巴伦
电气工程
计算机科学
网络拓扑
正交频分复用
拓扑(电路)
工程类
天线(收音机)
计算机网络
频道(广播)
作者
Yuen Hui Chee,Fatih Golcuk,Toru Matsuura,Christopher Beale,James F. Wang,Osama Shanaa
标识
DOI:10.1109/isscc.2017.7870376
摘要
Front-end modules (FEM) typically employ expensive III-V or SiGe technologies to provide relatively higher PA output power and lower LNA noise figure (NF) for larger distance coverage compared to what can be achieved in a CMOS transceiver SoC [1]. The WiFi FEM is typically designed as a standalone entity using linear and inefficient PA topologies, such as Class-A/AB, resulting in an FEM not taking advantage of the full capability of the transceiver SoC. Furthermore, due to the stringent EVM requirement, almost 10dB back-off from P sat is required, resulting in a poor PAE of <;7% at +20dBm P out for the conventional Class-A/AB topologies regardless of device technology [1-3]. The CMOS FEM in Fig. 17.1.1 addresses the above issues and achieves performance comparable to that of GaAs/SiGe FEM but offers higher efficiency while using the full capability of the transceiver to enhance its performance. The proposed FEM integrates a PA, an LNA, a T/R switch, a transmit signal-strength indicator (TSSI) and an RF digital pre-distortion (DPD) calibration loopback path. It has two ICs integrated inside the same package. The PA, the LNA, and the DPD-loopback path are implemented on a 55nm bulk CMOS IC, while the T/R switch, PA output balun, and TSSI are integrated on a 0.18μm CMOS SOI IC.
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