Additive manufacturing of patterned 2D semiconductor through recyclable masked growth

Significance Traditional semiconductor fabrication methods, such as lithography and etching, have been sufficient for the needs of integrated circuits over past decades. Their applicability has also been demonstrated in emerging 2D materials, which offers facile processing over large lateral dimensions, while unique and remarkable properties due to the confinement within atomic thicknesses. Nevertheless, each fabrication step adds cost to the manufacturing and increases the possibility of quality degradation. Here, we developed a method to directly synthesize arbitrary monolayer molybdenum disulfide patterns with high spatial resolution, excellent homogeneity, and electrical performance on insulating SiO 2 /Si. Significantly, our on-demand method allows for the repeated growth of patterned 2D materials with preserved structural integrity and material qualities, paving the way for simpler and cost-effective fabrication.