绝缘栅双极晶体管
材料科学
电磁干扰
门极关断晶闸管
电磁干扰
光电子学
电气工程
地面弹跳
负阻抗变换器
电压
电容
沟槽
逻辑门
晶体管
门驱动器
栅氧化层
工程类
物理
电压源
纳米技术
量子力学
电极
图层(电子)
作者
Wataru Saito,Shin Ichi Nishizawa
标识
DOI:10.1109/ted.2020.3002510
摘要
A new gate structure in the trench-gate insulated-gate bipolar transistor (IGBT) design is proposed and analyzed for power-loss reduction and the suppression of electromagnetic-interference (EMI) noise. Although the turn-off loss and the ON-state voltage drop Vce(sat) are improved by the injection-enhancement (IE) effect, the IE effect caused dynamic avalanche that limits the turn-off loss reduction. In addition, EMI noise is induced by high dI/dt and large surge current due to the negative gate capacitance. This article shows that the dynamic avalanche and the negative gate capacitance can be suppressed by the management of the electric field concentration and hole current flow around the trench gate by the proposed alternated trench-gate (AT) IGBT structure, and both low power loss and good switching controllability can be obtained. The device simulation results show that the AT-IGBT improves the turn-on surge current Isurge - Vce(sat) tradeoff compared with the conventional IGBTs.
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