场电子发射
电流密度
材料科学
阳极
薄脆饼
领域(数学)
箔法
纳米
正交晶系
电流(流体)
光电子学
纳米技术
分析化学(期刊)
电极
光学
化学
复合材料
物理
电子
衍射
物理化学
热力学
量子力学
色谱法
纯数学
数学
作者
Yubao Li,Yoshio Bando,Dmitri Golberg,Keiji Kurashima
摘要
Single-crystalline MoO3 nanobelts having an orthorhombic structure were prepared on a Si wafer via heating a Mo foil in air. The nanobelts were 50–300 nm wide and tens of nanometers thick. The nanobelt lengths lie in the [001] direction. Field-emission measurements showed that the threshold field decreased with the anode–sample separation increasing. Typically, a threshold field of 12.9 V/μm was determined at a spacing of 80 μm. The nanobelts exhibited a sharp increase in emission current density near the threshold field and, thus, reached a high current density at a relatively low field. Emission from both sharp corners and edges of the nanobelts is assumed to contribute to the high emission current. The high-current emission paired with high stability indicates that the prepared MoO3 nanobelt films are excellent field emitters.
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