X射线光电子能谱
锡
材料科学
化学气相沉积
分析化学(期刊)
沉积(地质)
衍射
薄膜
薄脆饼
X射线
冶金
化学
纳米技术
光学
化学工程
古生物学
物理
色谱法
沉积物
生物
工程类
作者
A. R. Chourasia,D. R. Chopra
出处
期刊:Surface Science Spectra
[American Vacuum Society]
日期:1992-06-01
卷期号:1 (2): 233-237
被引量:16
摘要
Thin films of TiN were deposited from TiCl4, NH3, and H2 in a lamp heated single wafer “warm wall” low pressure chemical vapor deposition reactor. The deposition was carried out on a TiSi2/Si sample. The thickness of the films is estimated to be 100 nm. The films were analyzed by x-ray diffraction, Rutherford backscattering spectroscopy, and x-ray photoelectron spectroscopy. The XPS data in Ti 2p, N 1s, Ti L3M23V, and Ti L3M23M23 regions are presented.
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