Simulation of the RRAM based Nonvolatile SRAM cell

This work investigates the performance of RRAM based Non-Volatile SRAM (NV-SRAM) cells. The architecture of NV-SRAM includes a 6T SRAM cell and a couple of one transistor-one resistive memory devices configuration. RRAM is controlled by MOSFETs in 1T1R configuration. The performance of NV-SRAM cell is investigated by circuit simulation with a SPICE compact model of oxide-based resistive random access memory based on the conductive filament evolution model.