Ce-Doped ZnO Based Fast Response UV Photoconductive Detector

A metal-semiconductor-metal photoconductive detector was fabricated using Ce-doped ZnO nanofibers synthesized by electrospinning and calcinations. UV photocurrents were carried out to study optoelectronic properties of Ce-doped ZnO nanofibers. The current-voltage (I–V) characteristics of photodetector device were analyzed under different wavelength UV illumination. The photocurrent increased by about 300 times under UV illumination. Results showed that the photocurrent of the device increased with the decrease of the wavelengths. A maximum photocurrent and photo-responsivity was observed at 365 nm, 308 nm, 254nm, respectively, under 30 V bias. The response and recovery time of the nanofibers was 16 s and 16 s at 365 nm, 10 s and 12 s at 308nm, 4 s and3 s at 254nm under 30 V bias, respectively.