Band gap narrowing in heavily doped N/sup +/ indium phosphide

The results of measurements of bandgap narrowing in sulfur-doped n/sup +/InP are given. The room-temperature photoluminescence spectra of n/sup +/InP layers were measured, and from the shift in energy of the photoluminescence peak the authors calculated the bandgap narrowing as a function of doping concentration which was measured using the Hall effect. In addition, bandgap narrowing obtained from the contact potential measurements using C-V characteristics was compared with bandgap narrowing from photoluminescence measurements, and the results show reasonable agreement.>