Thermoelectric properties of Ag1−xGaTe2 with chalcopyrite structure

In the present study, we investigated the high-temperature thermoelectric (TE) properties of AgGaTe2 with chalcopyrite structure. We tried to enhance the TE properties of AgGaTe2 by reducing the Ag content. The reduction of Ag increased the carrier concentration, leading to enhancement of the dimensionless figure of merit (ZT). The maximum ZT value was 0.77 at 850 K obtained in Ag0.95GaTe2, which was approximately two times higher than that of stoichiometric AgGaTe2.