Refinement of Pb(Zr,Ti)O/sub 3/ thin films grown by MOCVD

In the MOCVD (metalorganic chemical vapor deposition) process of Pb(Zr,Ti)O/sub 3/ (PZT) thin films, effects of the purity of Pb and Zr source precursors on the electrical properties were investigated. PZT thin films grown using high purity source precursors showed lower current densities, higher breakdown electric fields and better switching endurance characteristics than those of PZT thin films grown using low purity source precursors. These experimental results imply that refinement of source precursors is one of most important factors for improving electrical properties of ferroelectric thin films, as is the case in the growth of semiconductor thin films.