Research progress on preparation technology and application of near-infrared silicon-based materials

This paper summarizes the research progress of SiGe preparation technology at home and abroad, summarizes the advantages and disadvantages of low-voltage silicon epitaxy and molecular beam epitaxy, and discusses the applications of SiGe Heterojunction materials in pin, APD and waveguide laser detectors. Based on the development of black silicon preparation technology at home and abroad, femtosecond laser, wet etching and dry etching are discussed, and their applications in laser detectors are reviewed. Finally, the development prospects of the two materials and their application prospects are summarized and prospected, and the follow-up development direction is given.