Waveguiding and Crystallographic Properties Of Single Crystal Ti:Sapphire Lavers Produced by Pulsed Laser Deposition.

Layers of Tr:Sapphire with thicknesses between 1 and 82 microns have been produced by the Pulsed Laser Deposition (PLD) of a bulk Ti:Sapphire target (0.1 wt. %) onto nominally pure sapphire substrates of (0001) orientation. These were grown in ambient oxygen at around 10 -4 mbar using a KrF excimer laser supplying 500mJ per pulse, resulting in an energy density of 3-4 J/cm 2 .