材料科学
薄膜晶体管
铟
兴奋剂
氧化铟锡
光电子学
阈值电压
薄膜
晶体管
氧化物
图层(电子)
电子迁移率
纳米技术
电压
电气工程
冶金
工程类
作者
Ya-Fen Wei,Tao Zhang,Jing Wu,Tiejun Li,Lin Dong
出处
期刊:Vacuum
[Elsevier]
日期:2024-03-01
卷期号:221: 112868-112868
标识
DOI:10.1016/j.vacuum.2023.112868
摘要
Herein, indium-doped tin oxide (TIO) thin films were prepared using the solution process. The structural characteristics, surface morphologies, and chemical compositions of the prepared films were systematically investigated as a function of indium-doping contents. The films were integrated as a channel layer into thin-film transistors (TFTs). Results show that indium can be used as a carrier suppressor as well as a mobility enhancer for SnO2. The optimal devices exhibited satisfactory performance, achieving field-effect mobility of 8.94 cm2/V·s, positive threshold voltage of 0.25 V, small subthreshold swing of 0.4 V/decade, and on-to-off current ratio of 1.5×106. The results of this study suggest that TIO-TFTs are very promising for use in next-generation displays.
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