Persistent Luminescent Materials for Optical Information Storage Applications

Persistent luminescent (PersL) materials with deep-trap depths (∼1.0 eV) have exhibited promising potential in optical information storage applications to ensure a higher storage rate at room temperature. The PersL phenomenon arises from the trapping of charge carriers under light excitation, followed by their release through thermal or optical stimulation. In this chapter, an overview of the significant breakthroughs and latest advancements in deep-trap PersL material research is provided. The deep-trap PersL materials are categorized into four types based on their major compositions, including halide or oxyhalide compounds, sulfides, oxides, and nitride or oxynitride compounds. Additionally, various strategies for tailoring trap depth and emission wavelength in PersL materials are discussed, including the vacuum-referred binding energy model, band gap engineering, crystal field engineering, and synergistic defect engineering. Finally, valuable insights into the development of deep-trap PersL materials are prospected.