EUV resist modeling (PROLITH) for defect printability and stochastic behavior evaluation of 1Xnm DRAM technology node production

As EUV lithography continues to advance in semiconductor manufacturing, predicting wafer behavior, including stochastic effects and defects, has become crucial. This paper presents the development of a rigorous model using the PROLITH simulation tool, incorporating electron scattering and EUV stochastic behavior. The model integrates key factors such as photon absorption, acid generation, resist deprotection, and electron scattering to simulate EUV exposure and predict defect formation, such as stochastic bridging. By simulating these effects, the model provides valuable insights into how stochastic behavior influences wafer performance, aiding in process parameter optimization to reduce defects and improve yield. Additionally, the model is utilized to predict the impact of mask defects on wafer patterning, further enhancing its predictive capabilities. In conclusion, the PROLITH-based model provides a robust framework for predicting wafer behavior and defect formation under EUV conditions, contributing to improved process control and reliability in semiconductor manufacturing.