异质结
自旋电子学
凝聚态物理
单层
铁磁性
磁各向异性
堆积
磁性半导体
磁化
磁矩
材料科学
带隙
物理
纳米技术
磁场
核磁共振
量子力学
作者
Chunyan Xu,Jing Zhang,Yanjie Wang
标识
DOI:10.1016/j.physleta.2023.128789
摘要
Two-dimensional van der Waals magnetic heterostructures based on intrinsic ferromagnetic materials have potentially useful for realizing novel spintronic devices. Here, the electronic structure and magnetic property of BN/CrOBr heterostructures are investigated by using first-principles calculations. The calculations show that stacking patterns have no significant effects on the band structure of BN/CrOBr heterostructures, BN/CrOBr heterostructures are semiconductors with indirect band gap. The band gaps of CrOBr monolayer in BN/CrOBr heterostructures are reduced compared with the individual one. The total magnetic moment of CrOBr monolayer is not affected by h-BN monolayer. The h-BN monolayer enhances the in-plane magnetic anisotropy of CrOBr monolayer in BN/CrOBr heterostructures depends on stacking pattern. Furthermore, hole doping can switch the easy magnetization axis of BN/CrOBr heterostructure from in-plane to out-of-plane direction. The theoretical results show that BN/CrOBr heterostructure has potential applications in spintronics for its controllable magnetic anisotropy.
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