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Effects of high energy electrons on electron temperature measurements of asymmetric double Langmuir probes

作者
Chenyao Jin,Chi-Shung Yip,Di Jiang,Wei Zhang,Guosheng Xu
出处
期刊:Physics of Plasmas [American Institute of Physics]
卷期号:30 (7) 被引量:1
标识
DOI:10.1063/5.0134302
摘要

In this work, electron temperature was measured with both the asymmetric double Langmuir probe (ADLP) and the single Langmuir probe to investigate the reliability of the ADLP on the electron temperature measurement in multi-temperature Maxwellian plasmas. A series of I–V traces of the ADLP were obtained at various plasma conditions with different area ratios and analyzed with different methods including conventional ADLP analysis and two-temperature Maxwellian fitting with results measured by a single planar Langmuir probe analyzed with three-temperature Maxwellian fitting as reference. The measured Te of the ADLP is found to reflect that of the temperature of the degraded primary electrons when the area ratio of the probe tips is close to ∼16 and approaches the real effective electron temperature as the area ratio increases to a value of ∼30% higher than that measured by a single Langmuir probe, which occurs even when the area ratio is higher than the flux ratio of electrons and ions entering their respective sheaths. This effect is consistent with the distortion effect of Langmuir probe I–V traces caused by the presence of hotter electron species, which was computationally reconstructed and agreed well with the experimental observations. This result implies that an area ratio, possibly ∼20 times much larger than what was conventionally assumed, is needed for an ADLP to be reliably treated as a single Langmuir probe in practical settings, where electron energy distribution functions of plasmas are generally expected to be multi-temperature Maxwellian. This effect is also analogous to the current balance between a single Langmuir probe and the device wall, implying that this effect would also affect the application of the single Langmuir probe in plasmas, where the ion loss to the device wall can be reduced, such as plasmas in miniaturized devices, strong magnetic fields, or a highly ion-neutral collisional environment.

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