Opto‐Electronic Tuning of Neuron Emulation in Perovskite Volatile Memristive Transistors

Abstract The emulation of neuronal activity requires complex circuits that integrate multiple passive and active components, leading to a high circuit footprint. It is therefore apparent that developing a single device that can be used to emulate both synaptic and neuronal activity would allow less complexity and a much lower circuit footprint having significant impact on practical applications of neuromorphic systems. Herein, mixed halide perovskite‐based transistors are demonstrated to exhibit volatile memristive behavior that responds to both light and electric fields, opening the path for optoelectronic control of neuron‐like functions. Specifically, it is shown that by applying a low compliance current (I CC ) during drain current–voltage (I D –V D ) measurements, volatile memristive switching behavior is reported. A set of volatile I D –V D curves is presented under various gate biases, indicating a gate‐enabled shift of the low‐resistance state set voltage to higher values. The volatile nature of the device operated at low I CC allowed the demonstration of gate‐tunable neuronal functions, including amplitude‐ and frequency‐modulated spike firing. Furthermore, linear potentiation protocols and Leaky Integrate‐and‐Fire behavior is reported, while light pulses are shown to induce both photonic potentiation and graded optical neurons, opening the path for emulating neuron functions tunable by both light and electric fields.