材料科学
电介质
结构精修
铁电性
陶瓷
阿累尼乌斯方程
分析化学(期刊)
正交晶系
化学计量学
相(物质)
活化能
结晶学
晶体结构
复合材料
物理化学
光电子学
色谱法
有机化学
化学
作者
Rajveer Singh,Meenakshi Gautam,Vandna Luthra,S. Shankar
标识
DOI:10.1149/2162-8777/acff82
摘要
In this study, the authors focused on the preparation and characterization of Lead-free ferroelectric ceramics known as Sr 1−X Bi 2+2X/3 Nb 2 O 9 : SBBNX, where 0.0≤ × ≤0.4. The ceramics were synthesized using a conventional solid-state reaction route. The researchers performed X-ray diffraction (XRD) analysis to confirm the phase formation and employed the Rietveld refinement technique. The results indicated that the prepared SBBNX ceramics exhibited a single phase with an orthorhombic structure, specifically belonging to the A2 1 am space group. All samples were subjected to analysis using field emission scanning electron microscopy (FESEM) to investigate their surface morphology. The micrographs revealed a uniform distribution of grains (of size 2–4 μ m ) on the surface, with distinct grain boundaries. An increasing trend in both the dielectric constant (from 99 to 220 at room temperature) and transition temperature (from 396 °C to 490 °C) was noted with an increase of Bi content in SBN. The researchers estimated the activation energies by analyzing the Arrhenius plots of the ac conductivity. The obtained values ranged from 0.62 to 1.25 eV, indicating the presence of motion of oxygen vacancies in the SBBNX ceramics. The primary objective of this study was to optimize the Sr/Bi ratio in SBBNX ceramics to enhance their potential use in non-volatile random access memory (NVRAM) applications and high-temperature piezoelectric devices.
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