材料科学
暗电流
响应度
灵敏度(控制系统)
X射线探测器
光电探测器
探测器
检出限
量子效率
紫外线
吸收(声学)
探测量子效率
比探测率
纳米技术
光电子学
光学
物理
工程类
电子工程
统计
数学
图像质量
图像(数学)
人工智能
计算机科学
复合材料
作者
Fapeng Sun,Haojie Xu,Wenting Hong,Zhihua Sun,Wei Liu
标识
DOI:10.1002/adfm.202313776
摘要
Abstract Metal thio(seleno)phosphates are renowned for their multifaceted physical characteristics and versatile applications, particularly in optoelectronics. In detection applications, a low and stable dark current is crucial, enhancing the sensitivity and signal‐to‐noise ratio of detectors. Herein, a van der Waals layered material has synthesized, CuInP 2 Se 6 . Despite its nanometric scale, 2D CuInP 2 Se 6 detector transcends the conventional absorption inefficiencies tied to ultrathin materials. It delivers exceptional ultraviolet–visible detection, characterized by an ultralow, stable dark current of 150 fA, and a noise power density of 27.7 fA Hz −1/2 at room temperature. The in‐depth investigation reveals a responsivity of 4.47 A W −1 , an external quantum efficiency of 1369%, a special detectivity of 1.44 × 10 13 Jones, and a rapid response speed of 280 µs, positioning it at the pinnacle of 2D photodetector performance. The CuInP 2 Se 6 ’s ultralow, stable dark current paves the way for X‐ray detection, achieving an unprecedented sensitivity of 1.32 × 10 5 µC Gy air −1 cm −2 and a low detection limit of 0.15 µGy air s −1 . Furthermore, 2D CuInP 2 Se 6 detector exhibits a remarkable image‐sensing capability, adeptly capturing intricate patterns with high resolution. This discovery indicates its promise in revolutionizing integrated micro/nano optoelectronic devices, opening avenues for advancements in light and X‐ray detection and imaging technologies.
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