Valleytronics公司
单层
点反射
极化(电化学)
对称性破坏
拓扑(电路)
材料科学
凝聚态物理
物理
纳米技术
化学
铁磁性
量子力学
物理化学
自旋电子学
工程类
电气工程
作者
Mengteng Chen,Xiangru Kong,Xiao Xie,Xiaobiao Liu,Jia Li,F. M. Peeters,Linyang Li
摘要
In two-dimensional (2D) materials, breaking the inversion symmetry plays an important role in valleytronics. Ferrovalley (FV) materials can achieve spontaneous valley polarization (VP) without additional modulation due to the magnetic exchange interaction and strong spin-orbit coupling. Using first-principles calculations, we predict a new 2D material, Janus FeClSH, which exhibits a large spontaneous VP. This monolayer is a perfect FV material, where the valence band maximum and conduction band minimum are located at the K/K' point. A large VP of 102.95 meV is spontaneously generated for the case of out-of-plane magnetization. Additionally, we propose that the irradiating circularly polarized light can be used to realize VP for the case of in-plane magnetization. Remarkably, a triangular nanoflake of FeClSH with armchair edges can show nontrivial corner states, exhibiting a second-order topological insulator (SOTI) state. The VP effect and SOTI state are tunable with the Hubbard
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