回转率
电流(流体)
功率(物理)
电气工程
电子工程
碳化硅
计算机科学
材料科学
工程类
电压
物理
量子力学
冶金
作者
Yan Li,Xibo Yuan,Yonglei Zhang,Kai Wang,Z. D. Wang,Olayiwola Alatise,Wenzhi Zhou
标识
DOI:10.1109/tie.2024.3443969
摘要
To ensure balanced current sharing between paralleled power modules, active gate drivers (AGDs) can be used to adjust the currents dynamically. However, achieving effective, flexible and accurate dynamic current adjustment is a challenge for AGDs under the very fast switching speed of silicon carbide (SiC) devices, e.g., 100 ns. Therefore, an online unified turn-on/off delay and current slew rate regulation scheme for AGDs for paralleling SiC metal-oxide-semiconductor field-effect-transistor (MOSFET) power modules is proposed in this article. The advantage of the proposed scheme is that it achieves independent closed-loop control for the delay regulation and the current slew rate regulation, i.e., the adjustment of the current slew rate will not affect the already-tuned delay compensation. Also, the proposed AGD based on gate resistance adjustment with just two push–pull driver channels and less switching actions can achieve the wider-range and multilevel current slew rate regulation. Experimental validation of the closed-loop current regulation for current sharing between SiC power modules with the presented AGD is provided.
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