共栅
低噪声放大器
噪声系数
宽带
放大器
高电子迁移率晶体管
电气工程
电子工程
变压器
高增益天线
晶体管
带宽(计算)
工程类
电压
电信
CMOS芯片
作者
Yang Yuan,Bin Yuan,Jiaxuan Li,Zijian Wang,Jialong Zeng,Zhongjun Yu
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2023-08-09
卷期号:71 (1): 41-45
被引量:4
标识
DOI:10.1109/tcsii.2023.3303437
摘要
In this brief, a three-stage broadband cascode low noise amplifier (LNA) is proposed with transformer feedback and Darlington techniques. The first two stages use transformer feedback to provide low-frequency gain, and the Darlington structure is employed in the third stage to compensate for highfrequency gain. The additional transmission poles introduced by the transformer feedback increase the freedom of gain tuning with little effect on low-frequency gain, therefore facilitating the design of broadband LNAs. To verify the feasibility of bandwidth expansion of these two structures, the proposed LNA is designed and fabricated in a 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The measured results show that the proposed LNA achieves an average gain of 23.4 dB and a minimum noise figure (NF) of 2.1 dB in the operating band from 0.5 GHz to 30 GHz. The power consumption of the LNA is 246 mW at 6 V/ -0.6 V DC bias. The LNA has a compact chip size with an area of 2.2 × 0.7 mm2, including test pads.
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