钙钛矿(结构)
卤化物
材料科学
钝化
图层(电子)
碘化物
氧化物
沉积(地质)
化学工程
无机化学
光电子学
纳米技术
化学
冶金
古生物学
工程类
生物
沉积物
作者
Eun Young Choi,Jin‐Won Lee,Miguel Anaya,Alessandro J. Mirabelli,Hongjae Shim,Joseph Strzalka,Jongchul Lim,Siwon Yun,Miloš Dubajić,Jihoo Lim,Jan Seidel,Raphael Edem Agbenyeke,Chang Gyoun Kim,Nam Joong Jeon,Arman Mahboubi Soufiani,Helen Hejin Park,Jae Sung Yun
标识
DOI:10.1002/aenm.202301717
摘要
Abstract Long‐chain organic halide salts are widely used in perovskite‐based optoelectronic devices for surface passivation owing to their capability to interact with the surface defects of perovskites. Here, aluminum oxide (AlO x ) is introduced via atomic layer deposition onto octylammonium iodide (OAI) to exploit the benefits of organic halide salts without generating undesired defects. The devices incorporating AlO x on OAI‐treated perovskite (OAI/AlO x ) show enhancement in both device performance and photo‐stability compared to those with only treatment. A diffusion of aluminum from AlO x into the perovskite through surface characterization contributes to a uniform photo‐generated carrier transport in both the surface and the bulk of the perovskite absorber. In addition, it is revealed that light‐induced two‐dimensional perovskite formation on OAI/AlO x . This may be ascribed to preventing the loss of OA cations due to the presence of AlO x , leading to a decrease in the number of iodine anions which suppresses the light‐induced degradation of corresponding devices. Consequently, the devices show over 24% efficiency and retain their efficiency over 1000 hours under continuous light illumination.
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