材料科学
工程物理
多晶硅耗尽效应
辐射
光电子学
硅
电气工程
工程类
光学
物理
晶体管
栅氧化层
电压
作者
N. Enjalbert,Romain Cariou,Sébastien Dubois
出处
期刊:
日期:2024-12-11
卷期号:2
标识
DOI:10.52825/siliconpv.v2i.1289
摘要
In the context of increased space photovoltaic power needs and cost reduction pressures, silicon solar cells spark a new interest for space missions. This is even truer if the cost-effective mass-produced silicon technologies can be adapted to the specific constraints of the space environment. This study successfully demonstrated that cells with polycrystalline silicon-based passivated contacts could be adapted to the main prerequisites for space missions. Indeed, flexible and lightweight alternative polysilicon passivated contacts cells were prepared from gallium-doped substrates, with post-irradiation performances as good as those of conventional (thicker) PERC devices. The influence of the doping level was investigated. Low doping levels mitigate the radiation-induced degradation of the bulk carrier lifetime and therefore of the short-circuit current density, but result in lower open circuit voltages. Furthermore, it was shown that the surface and bulk hydrogenation step investigated in this study does not influence the post-irradiation effective carrier lifetime and its evolution under prolonged illumination in the temperature range 80°C-100°C (at least for the durations investigated here).
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