A novel WOx-based memristor with a Ti nano-island array

A novel WO x -based memristor with Ti nano-island arrays was developed in this study. A 100 nm thick Pt bottom electrode was deposited, and an ultrathin anodic aluminum oxide (AAO) template was used to obtain the Ti nano-island arrays. The WO x /Ti nano-island (NI)/Pt devices were prepared by magnetron sputtering using a WO y (y=2.7–2.9) target to obtain a 30 nm deposition layer of WO x . Scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and semiconductor analysis confirmed that the WO x -based memristor could be successfully produced with a highly ordered Ti nano-island array. The size and density of the NIs could be controlled by selecting the aperture of the AAO template. The oxygen interaction between the Ti nano-islands and WO x led to the creation of oxygen vacancies in their vicinity, resulting in the formation of an oxygen vacancy conductive filament (CF) without the need for a forming process. NIs tend to strengthen the electric field along the bias voltage direction, fostering the generation of the CF. The absolute values of V SET and V RESET were about 0.19 V and 0.69 V, respectively. Compared with the devices without the Ti NI arrays, the variation coefficients of V SET and V RESET of the WO x /Ti NI/Pt devices were reduced by about 84.9% and 83.7%, respectively. With smaller and more concentrated V SET and V RESET , the WO x /Ti NIs/Pt device showed a significantly improved switching stability.