材料科学
超晶格
制作
蚀刻(微加工)
光电子学
悬臂梁
图层(电子)
微电子机械系统
基质(水族馆)
宽禁带半导体
纳米技术
复合材料
地质学
海洋学
病理
医学
替代医学
作者
Takehiro Yamada,Yuto Ando,Hirotaka Watanabe,Yuta Furusawa,Atsushi Tanaka,Manato Deki,Shugo Nitta,Yoshio Honda,Jun Suda,Hiroshi Amano
标识
DOI:10.35848/1882-0786/abe657
摘要
Abstract Photo-electrochemical (PEC) etching is a promising technique for fabricating GaN microelectromechanical systems devices. In this study, we demonstrate the fabrication of GaN cantilevers by the bandgap-selective PEC etching of an InGaN superlattice sacrificial layer. By using an InGaN superlattice as a sacrifice layer, we found the PEC etching rate became higher than using a normal InGaN layer. As a result, the InGaN superlattice was completely etched and we fabricated GaN-based cantilevers whose resonance characteristics were measured. The Young’s modulus of GaN was determined from the resonance characteristics of GaN cantilevers to be the same as the highest value reported previously.
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