太赫兹辐射
二极管
晶体管
计算机科学
材料科学
半导体
航程(航空)
微电子机械系统
电气工程
网络拓扑
光电子学
电子工程
电信
工程物理
工程类
计算机网络
电压
复合材料
作者
Jakub Sobolewski,Yevhen Yashchyshyn
出处
期刊:IEEE Access
[Institute of Electrical and Electronics Engineers]
日期:2022-01-01
卷期号:10: 12983-12999
被引量:14
标识
DOI:10.1109/access.2022.3147019
摘要
In this paper the state of the art in RF switches for mm-wave frequency range is summarized and evaluated. Several leading technologies is presented from typical semiconductor devices based on transistors and diodes on Si, SiGe or III-V semiconductor substrates to more unconventional solutions such as microelectromechanical or phase-change material switches. The most important parameters and characteristics for those technologies are gathered and compiled for comparison. Besides different technologies, also various switch topologies of mm-wave switches are presented, assessed and compared. Furthermore, new emerging technological solutions approaching mm-wave range involving two-dimensional materials are also presented. Their evaluation is focused on proposed designs and current results for experimentally evaluated prototypes. Although the performance of these devices are currently not competitive with more traditional approaches, some reported results near the mm-wave range makes them a promising solution for future mm-wave switches and an interesting topic for further research and development.
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