Improvement of modulation speed in Si slow light modulator by optimizing doping profile
作者
Moe Takeuchi,Yosuke Terada,Toshihiko Baba
出处
期刊:日期:2015-08-01卷期号:2: 1-2
标识
DOI:10.1109/cleopr.2015.7376333
摘要
We theoretically investigated the modulation speed of Si photonic crystal slow light modulators. Optimizing the doping profile of p/n junction reduces the RC time constant and enhances the speed to 40 Gbps.