1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance

In this paper, we present vertical GaN Schottky barrier diodes implemented on bulk GaN substrates, delivering a breakdown voltage of ~1 kV, a specific ON-resistance of 1.3 mΩ·cm ² with current spreading considered, a high current swing over 13 orders of magnitude and a low ideality factor of 1.04. The developed devices exhibit current-collapse-free operation under 400 V/500 ns switching condition as well as zero reverse recovery characteristics, showing great potential for high-power and high-frequency applications.