450 V/18 mΩ Radiation Hardened P-GaN Gate HEMT With Single-Event Hardness at 82 MeV•cm 2 /mg

In this work, a 450 V/18 mΩ radiation hardened p-GaN gate HEMT with gate-junction termination extension (G-JTE) structure has been demonstrated. The multi-finger G-JTE HEMT exhibits an enhanced single-event burnout (SEB) voltage of 475 V with a relatively short LGDof 6.5 μm under Ta ion irradiation with a high LET of 82 MeV•cm2/mg, while maintaining a low on-resistance (RON) of 18.3 mΩ (or RON,spof 1.64 mΩ•cm2) and low RON•QGof 252 mΩ•nC. By virtue of the G-JTE to suppress the electric field concentration and consequently reduce the non-equilibrium carriers, the G-JTE HEMT can deliver a ${\text{BFO}}{{\text{M}}_{{\text{SEB}}}}\,\left( {{V_{{\text{SEB}}}}^2/{R_{{\text{ON}},{\text{sp}}}}} \right)$ of 138 MW/cm2, which is the highest among the state-of-the-art GaN HEMTs. This work demonstrates great potential of p-GaN gate HEMTs for high-frequency and high-efficiency power converters in aerospace applications.