Black phosphorus optoelectronics for mid-infrared silicon photonics

In this paper, we will outline the architectures of light emitting diode using black phosphorus-based van der Waals heterostructures. The demonstrated device can emit mid-infrared light, ranging from 3 to 4 μm, within the technologically important mid-infrared atmospheric window, and its emission is linearly polarized with the degree of polarization ~ 75%. Additionally, the device can perform high quantum efficiency, high bias voltage operation, fast modulation speed as well as long term stability. By leveraging the integrability of van der Waals materials, we further demonstrate our developed black phosphorus-based light emitting diode can be assembled with a mid-infrared silicon waveguide, which promises for midinfrared silicon photonics applications.