材料科学
光致发光
兴奋剂
卤化物
量子产额
化学工程
纳米技术
光电子学
无机化学
光学
荧光
物理
工程类
化学
作者
Samrat Das Adhikari,Sofia Masi,Carlos Echeverría‐Arrondo,Sara Miralles-Comins,Rafael S. Sánchez,Jesum Alves Fernandes,Vladimir S. Chirvony,Juan P. Martínez‐Pastor,Víctor Sans,Iván Mora‐Seró
标识
DOI:10.1002/adom.202101024
摘要
Abstract An ongoing demand toward lead‐free all‐inorganic cesium metal halide perovskites has presented Sn(II) as an ideal substitute of Pb(II) for applications in optoelectronic devices. The major concern regarding Sn(II) is the instability due to the ambient oxidation to Sn(IV). To expand the scope of traditional perovskite and analogues, herein the synthesis and optical performance of Sn(II)‐doped CsBr, a new material formed by interstitial doping of Sn(II) into the CsBr matrix, are reported for the first time. This material is prepared following an antisolvent mediated recrystallization method using a continuous flow reactor, which is beneficial for scaling up the production compared to traditional batch reactors. Sn(II)‐doped CsBr exhibits broadband orange emission with full‐width‐half‐maximum of 180 nm and a photoluminescence quantum yield of 21.5%. The emission turned to be highly stable over 7 months despite containing Sn(II). It is suggested that this is due to interstitial location of Sn(II) atoms in bulk of microcrystals. A broadband emission and high aerobic stability are attractive properties of the material for white‐light emitting applications.
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