磁阻随机存取存储器
磁化
凝聚态物理
材料科学
堆积
各向异性能量
电流密度
磁各向异性
自旋(空气动力学)
各向异性
光电子学
随机存取存储器
磁场
核磁共振
物理
光学
热力学
量子力学
计算机科学
计算机硬件
作者
Butsurin Jinnai,Chaoliang Zhang,A. Kurenkov,Mathias Bersweiler,H. Sato,Shunsuke Fukami,Hideo Ohno
摘要
Spin-orbit torque (SOT)-induced magnetization switching in Co/Pt multilayer structures with a Pt buffer layer is studied aiming to realize SOT-magnetic random access memory (MRAM) devices with high thermal stability. Current-induced magnetization switching and effective fields are measured using Hall-bar devices. The switching efficiency, defined as a ratio of the areal anisotropy energy density to switching current density, increases with increasing the number of Co/Pt stacks. This trend is in accordance with the stacking number dependence of effective fields per unit current density. The effective spin-Hall angle of the Pt buffer layer for the sample with multiple Co/Pt stacks is significantly larger than that of Pt previously reported, suggesting a generation of SOT in Co/Pt multilayers. These results indicate that Co/Pt multilayers are promising for SOT-MRAM devices possessing high thermal stability and small switching current.
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