抵抗
电子束光刻
平版印刷术
极紫外光刻
材料科学
极端紫外线
阴极射线
X射线光刻
光学
模版印刷
光电子学
浸没式光刻
下一代光刻
电子
纳米技术
物理
图层(电子)
激光器
量子力学
摘要
In order to achieve the use of pure water in the developable process of extreme-ultraviolet and electron beam lithography, instead of conventionally used tetramethylammonium hydroxide and organic solvents, a water developable resist material was designed and developed. The water-developable resist material was derived from woody biomass with beta-linked disaccharide unit for environmental affair, safety, easiness of handling, and health of the working people. 80 nm dense line patterning images with exposure dose of 22 μC/cm2 and CF4 etching selectivity of 1.8 with hardmask layer were provided by specific process conditions. The approach of our water-developable resist material will be one of the most promising technologies ready to be investigated into production of medical device applications.
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