The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer

CdTe is the buffer layer of GaAs substrate for HgCdTe epilayer grown by MBE,The purpose for introduction of buffer layer is to decrease the mismatched dislocation,the growth of CdTe buffer layer directly affects the quality of following grown HgCdTe thin film.However,up to now only few papers have reported the optimum thickness for CdTe buffer layer.By using of X-ray double crystal diffraction,EPD,FT-IR as well as spectroscopic ellipsometry the paper has studied the effects of the thickness on EPD for CdTe buffer layer,the optimum thickness of CdTe buffer layer has been obtained.