Study on the Antireflection Properties of ITO Thin Film in Visible Region

SiO2antireflection films were prepared on the PMMA substrates by MPS unipolar pulsed magnetron sputtering,and the optimal antireflection effect of SiO2film was achieved by adjusting the sputtering time. And then the ITO thin films were prepared with the different sputtering time,and the visible light transmittance,the sheet resistance and infrared emissivity of ITO / SiO2thin films were systematically investigated. The results show that the average visible light transmittance of the antireflection film increases by around 6%,and the average light transmittance of ITO thin film is over80% for less than 60 min of sputtering time. Furthermore,the sheet resistance and infrared emissivity of the antireflection film change small.