升华(心理学)
材料科学
位错
结晶学
纳米技术
工程物理
凝聚态物理
复合材料
心理学
物理
工程类
化学
心理治疗师
作者
Peter J. Wellmann,Matthias Arzig,Jonas Ihle,Manuel Kollmuß,Johannes Steiner,Marco Mauceri,Danilo Crippa,Francesco La Via,Michael Salamon,Norman Uhlmann,Melissa Roder,A.N. Danilewsky,Binh Duong Nguyen,Stefan Sandfeld
出处
期刊:Materials Science Forum
日期:2022-05-31
卷期号:1062: 104-112
被引量:3
摘要
The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).
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