Fabrication of high-performance 3D-interpenetrated network structures SiC/Al composites with SiC equiaxed grain frameworks

Electronic packaging materials should integrate with excellent overall performance including thermal, mechanical, and machinability to meet the challenges of the current highly integrated development of the electronics industry. The low-temperature sintering of high-strength 3D-SiC frameworks with equiaxed grains was achieved at 2250 °C by regulating the contents and particle size of coarse and fine powders in bimodal SiC hybrid particles. And 3D-interpenetrated network structures SiC/Al (SiC3D/Al) composites for electronic packaging were then fabricated using a vacuum/gas pressure infiltration Al alloys process. Results indicated the thermal conductivity (TC), coefficient of thermal expansion (CTE), and thermal deformation parameter (TDP) of the composites were improved with increasing coarse powder size. And SiC3D/Al with the coarse powder size of 38 μm and the coarse powder content of 60 wt% achieved the compatibility of optimal thermophysical and mechanical properties with flexural strength of 406.14 MPa, CTE of 5.38 × 10−6/K, TC of 230.03 W m−1 K−1, and TDP of 0.023 matching that of Si. A further increased coarse powder particle size to 48 μm and higher 58 μm reduced the mechanical properties by 14% and 22%, respectively. Moreover, the composites maintained stable CTE and TC after 100 thermal cycles, and 3D-SiC framework was free of defects and no interfacial debonding, ensuring long-term service reliability. Integration of distinguished overall performance was primarily implemented by the synergistic effect of the 3D network framework with equiaxed grains mutual strong bonding as well as the clean and well-bonded interface. This technology provides a reference for the design and synthesis of high-performance electronic packaging materials with scalability and tuneability.