Self-Assembling of Multilayered Polymorphs with Ion Beams

Polymorphism determines significant variations in materials' properties by lattice symmetry variation. If they are stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; changes of temperature or pressure when switching from one polymorph to another during synthesis may cause degradation of the structural quality. The present work reports on the single-step ion-beam-assisted fabrication of multilayered polymorph structures while applying the disorder-induced ordering approach. The dynamic annealing of disorder may be tuned, during ion irradiation, toward self-assembling of several polymorph interfaces. Gallium oxide multilayers with two polymorph interface repetitions are obtained. The single-crystal structure of the polymorphs is maintained between interfaces, exhibiting repeatable crystallographic relationships and optical properties. These data pave the way for enhancing materials' functionalities using not previously conceived capabilities of ion beam technology.