原子层沉积
材料科学
沉积(地质)
量子点
光电子学
化学工程
图层(电子)
纳米技术
古生物学
沉积物
生物
工程类
作者
Zijun Yan,F. Mi X. Yin D. Ye,Liyue Xu,Xiao Yang,Shouqiang Lai,Shuli Wang,Yue Lin,Guolong Chen,Yijun Lü,Hao‐Chung Kuo,Zhong Chen,Tingzhu Wu
标识
DOI:10.1016/j.jlumin.2023.119905
摘要
Atomic layer deposition (ALD) plays a pivotal role in raising the long-term stability of perovskite quantum dot (PQD). The deposition temperature of excellent alumina film prepared by ALD is generally higher than 200 °C. In such a temperature environment, the lattice morphology of PQD is seriously damaged. In this work, to effectively protect PQD, the optimum temperature for depositing alumina on the surface of CsPbBr3 PQD is investigated. The CsPbBr3 PQD is deposited on a transparent glass substrate. Subsequently, an alumina layer is deposited on the surface of PQD via ALD at a deposition temperature of 40–120 °C. In our experiment, the significant degradation of PQD is observed when the deposition temperature of ALD is set to 80 °C and above. Lowering the deposition temperature can effectively improve the optical performance of PQD. The samples with alumina deposited at 75 °C show excellent stability after undergoing aging tests, and therefore 75 °C is considered the best ALD temperature. Besides, white light-emitting diode (W-LED) is produced by a method that a stack structure consisting of CsPbBr3 coated via ALD at 75 °C and CdSe QD is excited using blue Micro-LED, and the color gamut of W-LED accounts for the wide area of 94.00% NTSC (1953) and 86.20% Rec.2020 displayed wide color gamut features. The experiment provides practical guidance for selecting the optimal deposition temperature for ALD-packaged PQD-based devices.
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