飞秒
超短脉冲
材料科学
兴奋剂
光电子学
放松(心理学)
半导体
电子
载流子散射
载流子
光子
凝聚态物理
光子学
载流子寿命
物理
光学
硅
激光器
心理学
社会心理学
量子力学
作者
Conglong Chen,Junxiao Yu,Zefang Lv,Fengling Zhang,Kuidong Wang,Runze Li,Jie Chen
标识
DOI:10.1088/1361-6463/ace2cd
摘要
Abstract Due to strong nonlinear optical effects and ultrafast response properties, transparent conductive oxides are promising candidate materials for next-generation THz modulation devices and other photonic applications. However, the mechanisms of photon-induced ultrafast carrier relaxations in those materials have yet to be fully understood. Here we investigated the interband carrier dynamics in a prototype of this family, Al-doped ZnO, with different excitation photon energies through femtosecond optical transmittance measurements. We found that the interband relaxation of the photon-induced carriers is mainly through second-order recombination, which is essentially the direct band-to-band recombination with the assistance of intraband electron relaxation. The high density of the doped electrons provides superior intraband relaxation channels through electron-phonon interaction and electron-impurity scattering, which contribute to the overall ultrafast response, especially under indirect and band tail transitions. This study provides a new insight into the ultrafast response mechanism of Al-doped ZnO and the analyzing method may also be generalized to other heavily doped semiconductors.
科研通智能强力驱动
Strongly Powered by AbleSci AI